Quantum wires and other novel structures by MBE overgrowth on the cleaved edges of multilayer substrates

机译：MBE在多层基板劈开边缘上过度生长的量子线和其他新颖结构

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Abstract: We review a new molecular beam epitaxy (MBE) technique we call cleaved edge overgrowth (CEO), which makes possible fabrication of quantum wires or other lower dimensional quantum structures with atomic precision. CEO is accomplished by performing two separate MBE overgrowths separated by an in situ cleave of the substrate sample. We review our development of this novel method and give three examples of new structures recently fabricated using it. !12

机译：摘要：我们回顾了一种称为分裂边缘过度生长（CEO）的新分子束外延（MBE）技术，该技术可以制造具有原子精度的量子线或其他低维量子结构。通过执行两个单独的MBE过度生长来完成CEO，这些过度生长由底物样品的原位切割隔开。我们回顾了这种新颖方法的发展，并给出了最近使用它制造的三个新结构的例子。！12

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《Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication》|1992年|p.83-91|共9页
会议地点 Somerset NJ(US)
作者
Loren Pfeiffer; ATT Bell Labs.; New Providence; NJ; USA; H.L. Stormer; ATT Bell Labs.; New Providence; NJ; USA; Alejandro R. Goni; ATT Bell Labs.; Stuttgart 80; Federal Republic of Germany; A.Pinczuk; ATT Bell Labs.; New Providence; NJ; USA; K.W. Bald;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. ZnCdSe quantum structures by (110)-cleaved-edge overgrowth: MBE growth and μ-PL characterization [J] . L. V. Titova, G. Cywinski, M. Kutrowski, Physica Status Solidi. C, Conferences and critical reviews . 2004,第4期

机译：（110）裂解边缘过度生长的ZnCdSe量子结构：MBE生长和μ-PL表征
2. ZnCdSe quantum structures by (110)-cleaved-edge overgrowth: MBE growth and mu-PL characterization [J] . Titova LV., Cywinski G., Kutrowski M., Physica status solidi, B. Basic research . 2004,第3期

机译：（110）裂解边缘过度生长的ZnCdSe量子结构：MBE生长和mu-PL表征
3. Electronic Structures and Carrier Distributions of T-Shaped Al_xGa_(1-x)As/Al_yGa_(1-y)As Quantum Wires Fabricated by a Cleaved-Edge Overgrowth Method [J] . D. H. Kim, J. H. You, J. H. Kim, Journal of nanoscience and nanotechnology . 2012,第7期

机译：T形Al_xGa_（1-x）As / Al_yGa_（1-y）As量子线的电子结构及载流子分布
4. Quantum wires and other novel structures by MBE overgrowth on the cleaved edges of multilayer substrates [C] . Loren Pfeiffer, H.L. Stormer, Alejandro R. Goni, Conference on advanced semiconductor epitzxial growth processses and lateral and vertical fabrication . 1992

机译：MBE过度生长的量子线和其他新颖结构在多层基板的切割边缘上
5. Optimization of a multilayer alumina template for electrochemical deposition of quantum wires and quantum dots. [D] . Ikram, Ataul Aziz. 2007

机译：优化用于电化学沉积量子线和量子点的多层氧化铝模板。
6. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature [O] . Zhi Liu, Buwen Cheng, Weixuan Hu, 2012

机译：通过提高过度生长温度增强Si（001）衬底上多层Ge量子点的光致发光
7. Vertical quantum wire realized with double cleaved-edge overgrowth [O] . Roth, S. F., Krenner, H. J., Schuh, D., 2006

机译：垂直量子线实现双切割边缘过度生长
8. Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPE [R] . Karam, N. H., Mastrovito, A., Haven, V., 1990

机译：Lp-mOVpE对纳米结构量子阱线阵列的图形化和过度生长

Quantum wires and other novel structures by MBE overgrowth on the cleaved edges of multilayer substrates

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