Infrared Reflectometry For Metrology Of Trenches In Power Devices

机译：功率器件沟槽计量的红外反射仪

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We present examples of the application of Model- Based Infrared Reflectometry (MBIR) to metrology of trench-based power devices at different stages in the fabrication process. These metrology problems are similar to those encountered during the fabricatio

机译：我们介绍了在制造过程中不同阶段基于模型的红外反射法（MBIR）在基于沟槽的功率器件的计量学中的应用示例。这些计量问题类似于制造过程中遇到的问题

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《Advanced Semiconductor Manufacturing Conference, 2007 IEEE/SEMI》|2007年|P.175-179|共5页
会议地点 StresaItaly
作者
Duran; C.A.; Maznev; A.A.; Merklin; G.T.; Mazurenko; A.; Gostein; M.;
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power semiconductor devices; process control; reflectometry; semiconductor device manufacture; MBIR; model-based infrared reflectometry; power semiconductor device fabrication process; process control; silicon power devices; trench metrology;

机译：功率半导体器件；过程控制;反射法半导体器件制造； MBIR;基于模型的红外反射仪功率半导体器件的制造工艺；过程控制;硅功率器件；沟槽计量;

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Infrared Reflectometry For Metrology Of Trenches In Power Devices

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