Co-doped ZnO Transparent Conductive Films for LCD and UV Detectors

摘要

Zr, Ga co-doped ZnO transparent conductive films were deposited on glass substrates by DC magnetron sputtering at room temperature.The influence of sputtering pressure on the structural, electrical, and optical properties of Zr, Ga co-doped ZnO films was investigated by X-ray diffraction, scanning electron microscopy(SEM),digital four-point probe, and optical transmission spectroscopy. The lowest resistivity of the Zr, Ga co-doped ZnO film is 3.01 × 10~(-4)Ω . cm.All the films present a high transmittance of above 91% in the visible range. These results make the possibility for liquid crystal display(LCD) and UV photoconductive detectors.