Characteristic of vapor dynamic process for sulfur doped n-type diamond films

摘要

Monte Carlo simulations are adopted to study the space distribution of the particles in the mixture of CH_4/H_2/H_2S/Ar considering the avalanche collision and dissociative ionization of electrons based on the theory of glow discharge in electron-assisted chemical vapor deposition (EACVD) system. The relationship between the space distribution and the recombination rate of H and CH_3, CH_3~+ fragment particles is given. The dynamic process of the n-type doped diamond film is simulated under different gas pressure. The particle distributions of S, S~+ and Ar~+ are also obtained. The result is very important for investigation of n-type diamond film doping at low temperature.