首页> 外国专利> N-TYPE DOPING OF NANOCRYSTALLINE DIAMOND FILMS WITH NITROGEN AND ELECTRODES MADE THEREFROM

N-TYPE DOPING OF NANOCRYSTALLINE DIAMOND FILMS WITH NITROGEN AND ELECTRODES MADE THEREFROM

机译:用氮和电极制成的纳米晶金刚石膜的N型掺杂

摘要

An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 1019 atoms/cm3 of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.
机译:公开了具有不小于10 19原子/ cm 3的氮的导电n型超纳米晶金刚石(UNCD)。制作n掺杂UNCD的方法。还公开了一种用于可预测地控制电导率的方法。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号