FILM OF SEMICONDUCTOR SINGLE CRYSTAL OF N-TYPE (100) FACE-ORIENTED DIAMOND DOPED WITH PHOSPHORUS ATOM AND PROCESS FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a film of a semiconductor single crystal of n-type (100) face-oriented diamond doped with a phosphorous atom, and a process for producing the film.;SOLUTION: The method is characterized in that: a substrate of (100) face-oriented diamond is used; and (100) face-oriented diamond is epitaxially grown on the substrate by a vapor phase growing means while allowing hydrogen, a hydrocarbon and a phosphorus compound to be present in the vapor phase under the conditions that the ratio of phosphorus atoms to carbon atoms in the vapor phase is ≥0.1%, and the ratio of carbon atoms to hydrogen atoms is ≥0.05%.;COPYRIGHT: (C)2006,JPO&NCIPI