Flash Lamp Activation of n- and p-type Dopants in Strained and Unstrained SOI and HOI

摘要

Strained Si and SiGe/Si heterostructures on insulator are promising channel materials for future nanoelectronics devices. The successful integration of these materials into new MOSFETs architectures depends on the ability of forming ultra shallow and ultra steep junctions for the source/drain regions. Here, we present results using flash lamp annealing for dopant activation in SOI, sSOI, HOI and sHOI. Flash lamp annealing technique allows complete suppression of diffusion while obtaining sheet resistances lower than 500 Ω/□, in both, SOI and sSOI. First investigations of strained and unstrained SiGe heterostructures after flash lamp annealing indicated significant diffusional broadening of Sb implant profiles and low electrical activation. In contrast, B shows higher activation but significant dopant loss in the near surface region.