Modelling of realistic annealing behaviour of amorphous silicon photovoltaic devices

摘要

Long-term degradation and annealing behaviour of a-Si mini-modules is investigated in this paper. Four devices were firstly degraded by light and then annealed in the dark at temperatures rangingfrom 65-85℃. Dark annealing rates were obtained for each temperature. Further annealing with light bias was carried out for two of the devices in order to study the interaction between thelight-induced degradation and thermal annealing process. Resultsdemonstrate that the annealing in the dark is strongly influenced by the operating temperature but also dependent on thehistory of the devices. Annealing is a self-limiting process and is significantly influenced by the light intensityin the short-term exposure, giving rise for a balance-equation for modelling purposes.