首页> 外文会议>9th Latin American Congress on Surface Science and its Applications, Jul 5-9, 1999, La Habana, Cuba >INVERSION OF A DONOR IMPURITY LEVELS IN A SPHERICAL GaAs/Ga_(0.3)Al_(0.7)As/Ga_(0.55)Al_(0.45)As DOUBLE-STEP QUANTUM DOT
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INVERSION OF A DONOR IMPURITY LEVELS IN A SPHERICAL GaAs/Ga_(0.3)Al_(0.7)As/Ga_(0.55)Al_(0.45)As DOUBLE-STEP QUANTUM DOT

机译:球形GaAs / Ga_(0.3)Al_(0.7)As / Ga_(0.55)Al_(0.45)As双阶梯量子点中掺杂杂质水平的反演

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摘要

Donor energy levels inversion in a double-step a quantum dot with a small rectangular potential inside a large rectangular potential is analyzed. It is considered a model of a spherical OaAs/Ga_(0.7)Al_(0.3)As/Ga_(0.55)Al_(0.45)As quantum dot in which the electron effective mass and the dielectric constant depend on the Al concentration. In order to solve the Schoedinger equation for a D~0 impurity centered in a QD with spherical symmetry we have used an exact numerical procedure based on trigonometric sweep method. Our results show a considerable enhancement of the binding energy values comparing to previous results due to material parameters dependence. We have found that the curves for the binding energies plotted as functions of the QD radius have a different number of the pronounced peaks, crossovers and inversions of level ordering.
机译:分析了在大矩形电势内具有小的矩形电势的量子点的双步施主能级反转。认为是球形的OaAs / Ga_(0.7)Al_(0.3)As / Ga_(0.55)Al_(0.45)As量子点的模型,其中电子有效质量和介电常数取决于Al浓度。为了解决以球形对称性为中心的QD中D〜0杂质的Schoedinger方程,我们使用了基于三角扫描法的精确数值程序。由于材料参数的依赖性,我们的结果显示与以前的结果相比,结合能值有了显着提高。我们已经发现,作为QD半径的函数绘制的结合能的曲线具有不同数量的明显的峰,交叉和能级顺序的倒置。

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