Radiation Damage in MOS Structures, Irradiated with High-Energy Heavy Ions and Fast Neutrons, with Regard to Charge DLTS and C-V Measurements

摘要

Radiation-induced changes in MOS capacitor structures irradiated with Bi (710 MeV), Kr (245 MeV), Ar (280, 155 MeV) ions and fast neutrons (E>0.1 MeV) have been studied in view of Q-DLTS and C-V techniques. As was found, high energy ion and neutron irradiation enhance the induction of positive charge density in the oxide layer of MOS samples. The number of electrically active defects in this layer strongly decreases under dense electronic excitations. No dependence of vacancy-oxygen center concentration in silicon substrate normalized per number of displaced atoms by nuclear elastic collisions on projectile type have been observed.