Gate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor Structures

摘要

The factors deteriorating accuracy of gate oxide integrity (GOI) evaluation using non-ideal metal-oxide-semiconductor capacitor (MOSCAP) structures are investigated. For the MOSCAP composed from a polycrystalline silicon gate fabricated on the top of an oxidized Si wafer electrical resistances of the gate, substrate material and wafer backside contact can influence the GOI evaluation accuracy. The evaluation errors are especially strong in the case of thin and high quality oxide films, where the intense electric fields are used during the measurements. Finally we propose modifications to the measurement and data evaluation procedures, which can minimize the GOI evaluation errors, improve accuracy and sensitivity.