Electrical Activity of Dislocations in Si Decorated by Ni

摘要

In this paper we present results of DLTS measurements in dislocations decorated by Ni in n-FZ-Si., which is an ubiquitous impurity in silicon technology. Our experiments show that Ni segregation or precipitation at dislocations results in asymmetrically broadened DLTS-line, corresponding to deep localized acceptor states in an energy range E_C-(0.3-0.48)eV. We have also observed some unusual phenomena in DLTS, indicating possible diffusion of Ni along dislocations in a strong electric field and, probably, the electronic transport along decorated dislocations.