Characterization of SiC Grown on Si(111) by Supersonic C_(60) Beams

摘要

The development of electronic and optoelectronic devices based on SiC/Si is strongly limited by the difficulties inherent in the growth of high quality films. Heteroepitaxial growth on Si with CVD techniques leads to SiC films with several types of defects, and in particular a high density of the so-called "voids". Our novel approach for the activation of the carbidization process is based on fullerene precursors seeded in supersonic beams and Si substrates in UHV. The kinetic energy of the fullerenes in the beam, tuneable up to about 60 eV, favours the formation of Si-C bonds at lower temperatures, improving control on the quality of films. SiC films have been grown on Si(111)-7x7 surface, at two different kinetic energies of the C_(60) supersonic beam (5eV and 20eV) and at a substrate temperature of 750℃. Films have been characterised by Auger and Photoelectron spectroscopy: their electronic properties and the Si-C bond formation as a function of the initial kinetic energy of the beam are discussed.