Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown

摘要

In this paper we show that single photon detectors (SPAD) are capable to be used as material quality probes in the range from 10~(13) to 10~(10) defects/cm~3. We have fabricated Spads with differences in the n~+ formation: some of them have been doped by ion implantation and some others by in situ doped poly-Si deposition. Having found different dark counting behaviour, we introduce a model that aims to give a quantitative analysis for the defects.