Nitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical Etching

摘要

The hydrogen penetration during wet chemical etching into Czochralski grown silicon crystals doped with (NCz) or without (Cz) nitrogen has been studied. It is observed that the hydrogen penetration depth under wet chemical etching into NCz samples is larger than that into Cz ones that is explained by the nitrogen effect on the formation of oxygen related traps for hydrogen. It is found that hydrogen passivates nitrogen-oxygen related shallow donors and hydrogen binding energy to these donors is higher than that for phosphorus. Hydrogen capture radius for phosphorus, thermal donors and nitrogen-oxygen shallow donors has been estimated.