Influence of Depth in Helium Desorption from Cavities Induced by ~3He Implantation in Silicon

摘要

We implanted silicon at different depth with ~3He. We used 1.55 MeV helium implantation and aluminum foils in order to obtain implanted depths ranging from 1.1 to 5.6 μm as simulated by TRIM. All these implantation were done with a dose of 5xl0~(16) He/cm~2. This dose is higher enough to create cavities for all cases studied. The study showed that the desorption speed decreases with the implantation depth. The classical model of helium desorption can no longer be applied. New approaches were developed for the desorption of helium from deeper implantation. In addition, as expected, the activation energy of the desorption is not depth dependent.