Silicon Nanoclusters in Thermal Oxide Films on Silicon

摘要

The structure of interface of thermal silicon oxide on p- and n-silicon with different content of activators was studied by using the method of the local Cathodoluminescence (CL). The comparison of the CL spectra of SiO_2/Si interface and SiO_2/Si composite materials shows that interface and layer with thickness 5-15nm near interface are a composite of silicon nanoclusters and silicon oxide. For p-silicon the width of this composite layer and size of silicon clusters are larger that for n-silicon. The electrical hardness of silicon oxide on p-silicon is lower that one on n-silicon.