p-n Junction Leakage in Neutron-Irradiated Diodes Fabricated in Various Silicon Substrates

摘要

The leakage current in n~+p gated diodes and junctions, fabricated in different substrate types (Czochralski gettered and non-gettered, epitaxial and FZ) and exposed to 1 MeV neutron fluences in the range 5x10~(11)-5x10~(13) n/cm~2 has been studied in detail. The use of a gated diode enabled to single out the effect of the irradiation on the different geometrical (areal, peripheral and corner) and physical components (diffusion, bulk and surface generation). It was found that in small-sized junctions or gated diodes the corner component dominates the peripheral and overall leakage current, for the investigated neutron fluence range. At the same time, it was observed that the peripheral leakage, usually ascribed to the surface generation, is after neutron irradiation with the higher considered fluences controlled by the bulk component. More specifically, it is then the bulk diffusion current that governs the peripheral radiation-induced leakage current.