Recombination Lifetimes of Iron Contaminated Silicon Wafers: Characterization Through a Single set of Capture Cross-Sections

摘要

Quantitative iron detection in silicon by advanced lifetime methods requires the precise knowledge of iron recombination parameters. The aim of this work is to extract a single set of capture cross-sections, which can describe results of all relevant minority carrier lifetime methods (i.e. μ-PCD, ELYMAT, and SPV). The analysis is based on a review of recombination lifetime data of iron contaminated samples, published in the literature and our own data. The dependence of recombination lifetime on iron content and doping concentration as well as on temperature and injection level is included in the analysis. With the set of capture coefficients derived in this work, it is possible to model all analyzed data sets with very good agreement.