Stress-Induced Redistribution of Point Defects in Silicon Device Structures

摘要

A model has been developed for the stress-induced redistribution of intrinsic point defects in silicon. It incorporates equilibrium conditions different for defects at the surface and in the bulk of silicon. Employed in computer simulations, the model provides an explanation to the phenomenon of cavity formation in silicon due to localized stresses caused by patterned nitride films.