Investigation of Nano SiC Resonator

摘要

In this paper, a nano SiC resonator with high frequency and high Q factor was developed. This resonator utilized as-deposited PECVD SiC thin film as its resonance diaphragm, a thin layer of tungsten as its upper electrode, the thickness of this combined thin film is about 680 nm. The fabrication process is simple and under low temperature (<300 °C), which make it could be integrated with CMOS process. Tested by a nano-based method, this SiC nano Resonator shows good resonance performance at 1.98MHz and has high Q factor about 440. Due to its material merits, this high quality nano SiC resonator could be applied in harsh environment, such as, high temperature, high pressure and erosion conditions.