Fluorine doped ZnO thin films deposited by RF magnetron sputtering

摘要

Growth of ZnO films by reactive ion sputtering has been investigated using Ar-H_2 and Ar-CHF_3-H_2 as a function of the partial pressures (pp) of the reactive gases, the substrate temperature and sputtering power. Use of H_2 reduced the resistivity by a factor of 100, with doping giving a further decrease by a factor of 10. The lowest resistivity (5.4 ×10~(-3) Ω.cm) was achieved using ppH_2 = 5%, pp CHF_3 = 4% at a total pressure of 5 mTorr, the balance being Ar. Optical transmission of > 80% in the visible range was achieved.