Fabrication of p-type CoGa_2O_4 thin film and its photoelectrochemical properties

摘要

The photoelectrical properties of transition metaloxide have a lot of applications such as solar cellsand water splitting by sunlight. So far, a number ofstudies have been done on the photoelectrochemicalproperties of n-type oxide semiconductors likeFe_2O_3 and TiO_2 for the application to the solar watersplitting because their good stability in water andhigh responsiveness to visible light[1]. On thecontrary, the photoelectrochemical properties of ptypesemiconductor materials are not reported a lotbecause they are unstable and sensible tophotocorrosion.[2]