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In-Substrate Resonators and Bandpass Filters with Improved Insertion Loss in K-Band Utilizing Low Loss Glass Interposer Technology and Superlattice Conductors

机译:利用低损耗玻璃中介层技术和超晶格导体,改善了K波段插入损耗的衬底内谐振器和带通滤波器

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摘要

In this work, we report on in-substrate passive components using a high performance glass interposer and through glass via (TGV) technology and a multi-layer superlattice conductor architecture. Minimal RF loss is achieved using low dielectric loss glass substrates and superlattice conductors featuring skin effect suppression. Half mode substrate integrated waveguide (HMSIW) resonators and two-pole bandpass filters, embedded inside a glass interposer substrate, are used as test vehicles for the demonstration of insertion loss improvement in K-band. The utilized conductor is made of 20 layers of Cu/NiFe with each pair of 360 nm/30 nm, respectively, where NiFe layers with negative permeability in frequency range of interest are used for eddy current cancelling and improving the conductor loss. Control devices using the same glass substrate and conductor made of pure copper are fabricated for comparison purposes. The glass interposer substrate (SGW3, Corning Incorporated) has a thickness of 0.13 mm and the TGV's with a diameter of 0.08 mm. Up to 0.3 dB reduction in the insertion loss is achieved by using the proposed superlattice approach on glass substrates.
机译:在这项工作中,我们报告了使用高性能玻璃中介层以及玻璃过孔(TGV)技术和多层超晶格导体架构的衬底内无源组件。使用低介电损耗的玻璃基板和具有趋肤效应抑制功能的超晶格导体可实现最小的RF损耗。半模衬底集成波导(HMSIW)谐振器和嵌入在玻璃中介层衬底内部的两极带通滤波器被用作测试工具,以演示K波段插入损耗的改善。所使用的导体由20层Cu / NiFe构成,每对分别为360 nm / 30 nm,其中在感兴趣的频率范围内具有负磁导率的NiFe层用于消除涡流并改善导体损耗。为了进行比较,制造了使用相同玻璃基板和纯铜导体的控制装置。玻璃中介层基板(SGW3,康宁公司)的厚度为0.13毫米,TGV的直径为0.08毫米。通过在玻璃基板上使用建议的超晶格方法,可以将插入损耗降低多达0.3 dB。

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