GaAs Surface Modifications Under Millimetre Wave Irradiation

摘要

The method of precise chemical analysis was employed for determination of "free" (non-incorporated into crystal lattice) Ga and As atoms at the GaAs surface after irradiation at frequency of 40-75 GHz with power intensity of 9-25 mW. Obtained results show that the near-surface layer composition undergoes the considerable changes due to millimetre wave irradiation. The effects observed are related with plastic deformations resulted from the absorption of the electromagnetic wave in near-surface layer of the semiconductor.