Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes

摘要

The similarities of the trenches related with micropipes observed in 4H-SiC layers formed by sublimation epitaxy are compared with the line-shaped pits observed by optical microscopy in the vicinity of closing micropipes in 4H-SiC epilayers grown by the CVD method. The disturbance of the step-flow along the trenches and the related extended defects are discussed.