Determination of the Characteristics of an Ensemble of Planar Defects in Single Crystals of a Bi-Sr-Ca-Cu-O system Under the Diffraction Data. 2. The Ordered Distribution of Defects

摘要

Distributions of the X-ray intensity diffracted by the disordered Bi-Sr-Ga-Cu-O single crystals are modelled within the framework of a model of the homogeneous short-range order in the planar defect (PD) arrangements over the crystal. The features of the scattered intensity caused by the PD distribution pattern in the crystal are found. On this basis, a technique of the ex perimental-data analysis is proposed allowing the PD type and statistical parameters of the PD distributions in the crystal to be determined by using the relative positions of the diffraction peaks and a shape of the peak profile.