首页> 外文会议>42nd international symposium on microelectronics (IMAPS 2009) >Laser Scribing of Copper/Low-k Dielectric Semiconductor Materials by Nanosecond and Ultrafast Pulsewidth Lasers
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Laser Scribing of Copper/Low-k Dielectric Semiconductor Materials by Nanosecond and Ultrafast Pulsewidth Lasers

机译:纳秒级和超快脉宽激光器对铜/低k介电半导体材料的激光刻划

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摘要

The adoption of copper/low-k technology into semiconductor devices has created new challenges for mechanicalrndicing. Low-k dielectrics are less mechanically strong compared to SiO_2, making these layers susceptible tornchipping, cracking, and delamination during saw dicing. Laser scribing or dicing of these devices offers a possiblernsolution. Because the absorption of laser energy is dependent on the materials and layer thicknesses in arnsemiconductor stack, careful selection of the laser parameters are important for laser processing. This presentationrnprovides a comparison of laser processing of copper/Black Diamond low-k materials using nanosecond andrnultrafast pulsewidth lasers.
机译:在半导体器件中采用铜/低k技术已经为机械切割带来了新的挑战。与SiO_2相比,低k介电层的机械强度较低,从而使这些层在锯切过程中易于碎裂,开裂和分层。这些设备的激光划片或切割提供了可能的解决方案。因为激光能量的吸收取决于半导体叠层中的材料和层厚度,所以仔细选择激光参数对于激光加工很重要。本演讲提供了使用纳秒级和超快脉冲宽度激光器对铜/黑金刚石低k材料进行激光加工的比较。

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