首页> 外文会议>42nd international symposium on microelectronics (IMAPS 2009) >Comparison of Whisker Growth from Pressure-Induced and Environment-Induced Whisker Growth Test Methods
【24h】

Comparison of Whisker Growth from Pressure-Induced and Environment-Induced Whisker Growth Test Methods

机译:压力诱导和环境诱导晶须生长测试方法对晶须生长的比较

获取原文
获取原文并翻译 | 示例

摘要

One of the remaining challenges associated with the use of lead-free materials in electronics is the potentialrnfailure risk associated with tin whiskers. Despite intense research in recent years, there are still no accelerated testrnmethods to reliably predict whisker growth in field application conditions. Semiconductor component and electronicrnsystem manufacturers rely on a set of environmental exposure conditions defined by industry standards to qualifyrnand monitor plating processes. While these test methods offer a common platform for package qualification, theirrnvalue for quantitative whisker-induced failure risk assessment is quite limited. Additionally, these tests are timeconsumingrnand labor intensive, making it difficult to use for purposes such as process improvement, control, andrnmonitoring.rnIn this paper, a mechanical indentation method is evaluated for assessing the whisker growth propensity of tin andrnselect tin alloys plated on copper, brass, and alloy 42 substrates. Indentation-induced growth results are comparedrnwith responses to standard test conditions including temperature cycling and elevated temperature and humidity.
机译:与电子中使用无铅材料相关的剩余挑战之一是与锡晶须相关的潜在失效风险。尽管近年来进行了深入的研究,但仍没有加速的测试方法能够可靠地预测现场应用条件下的晶须生长。半导体组件和电子系统制造商依赖于行业标准定义的一组环境暴露条件来限定和监视电镀过程。尽管这些测试方法提供了包装合格性的通用平台,但是用于晶须引起的失效风险评估的数值非常有限。此外,这些测试耗时且劳动强度大,因此难以用于工艺改进,控制和监控等目的。黄铜和合金42基材。将压痕诱导的生长结果与对标准测试条件(包括温度循环以及高温和高湿)的响应进行比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号