The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects

摘要

In this work the Monte Carlo - Binary Collision Approximation is applied to the profile simulation of 500 keV Al~+ ions implanted at room temperature in 6H-SiC. A very large fluence range that goes from almost perfect to amorphous as-implanted crystals was simulated. For increasing ion fluence the code takes dynamically into account the reduction of channeling tails and the variation of SiC density, both due to the accumulation of crystal damage. The predicted shift of the projected range towards deeper depths and the saturation of channeling tails for increasing ion fluence are confirmed by the Secondary Ion Mass Spectrometry characterisation.