Precision and Robust CMOS Voltage Reference Based on the Work Function Difference of Poly Si Gate

摘要

This paper presents a new precision and robustrnCMOS voltage reference consisting of two sets of pairrntransistors: One of the sets has negative temperaturerncoefficient of their threshold voltage difference, whilernthe other positive temperature coefficient. A mainrnfeature of the Voltage Reference is the use of pairrntransistors which ensures the accuracy of the referencerncircuit under process fluctuations. The measured resultsrnrevealed without adjusting trimming that the voltagernreference has (1)excellent reproducibility of the outputrnvoltage within ± 2%, (2)low temperature coefficient ofrnless than 80ppm/℃ and (3)low current consumption ofrn0.6μA.