Noise Analysis for a SiGe HBT by Hydrodynamic Device Simulation

摘要

A detailed analysis of the terminal current noise for a realistic SiGe HBT by hydrodynamic device simulation including noise due to electron scattering, hole scattering, Shockley-Read-Hall recombination, and impact ionization is presented for the first time. It is shown that close to high injection the collector current noise exceeds the corresponding shot noise due to hole scattering within the base. The cross-correlation spectrum of the base and collector current fluctuations is found to he not negligible as often assumed in compact models.