Effects of Grain-Boundaries in Excimer-Laser Crystallized Poly-Si Thin-Film Transistors

摘要

Effect of grain boundaries on poly-Si thin-film transistor was studied by direct observation of grain boundaries in the TFT channel. It has been confirmed that reducing the number of grains in the channel increases the field-effect mobility. Reducing the size of channel increases the deviation of the field-effect mobility, due to the non-uniform nature of position and hence the increased deviation of number of the grains in the channel. It has been also found that the off-current increases if the region near the drain edge has a lot of grains.