首页> 外文会议>31th European Solid-State Device Research Conference, Sep 11-13, 2001, Nuremberg, Germany >Effects of Grain-Boundaries in Excimer-Laser Crystallized Poly-Si Thin-Film Transistors
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Effects of Grain-Boundaries in Excimer-Laser Crystallized Poly-Si Thin-Film Transistors

机译:准分子激光结晶多晶硅薄膜晶体管中晶界的影响

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摘要

Effect of grain boundaries on poly-Si thin-film transistor was studied by direct observation of grain boundaries in the TFT channel. It has been confirmed that reducing the number of grains in the channel increases the field-effect mobility. Reducing the size of channel increases the deviation of the field-effect mobility, due to the non-uniform nature of position and hence the increased deviation of number of the grains in the channel. It has been also found that the off-current increases if the region near the drain edge has a lot of grains.
机译:通过直接观察TFT沟道中的晶界,研究了晶界对多晶硅薄膜晶体管的影响。已经证实,减少沟道中晶粒的数量会增加场效应迁移率。由于位置的不均匀性,减小通道的尺寸会增加场效应迁移率的偏差,因此通道中晶粒数量的偏差也会增加。还已经发现,如果漏极边缘附近的区域具有大量晶粒,则截止电流增加。

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