A Deep X-Ray Lithography (DXRL) beamline was just commissioned at ELETTRA, the Italian third generation synchrotron light source. The beamline characteristics allow the etching of up to 2 mm high resist structure with micrometer range lateral dimensions and steep side walls. However high photon energies can induce a lack of adhesion of the resist on the metallic substrate and high power density can provoke thermoelastic deformations of the mask/resist assembly during the exposition. This communication presents a qualitative and quantitative approach of these two sources of defects and correlates them with the microstructures obtained at ELETTRA.
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