首页> 外文会议>2nd International EUSPEN Conference on Precision Engineering Nanotechnology Vol.1, May 27th-31st, 2001, Turin, Italy >Removal Characteristics of Plasma Chemical Vaporization Machining with a Pipe Electrode
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Removal Characteristics of Plasma Chemical Vaporization Machining with a Pipe Electrode

机译:管电极对等离子体化学汽化加工的去除特性

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Plasma chemical vaporization machining (CVM) is a high-precision chemical shaping method using rf plasma generated in the proximity of an electrode in an atmospheric environment. The purpose of the present study is to clarify the removal characteristics of plasma CVM, such as the removal rate and the surface roughness. Polished fused silica plates were processed by plasma CVM, polishing and precision grinding under various conditions. The removal rate of the plasma CVM was about 4 times to 1100 times faster than that of polishing, and the maximum removal rate was almost equal to that of precision grinding. The roughnesses of the resultant surfaces were almost the same as that of the polished surface.
机译:等离子体化学汽化加工(CVM)是一种高精度的化学成型方法,使用的是在大气环境中在电极附近产生的RF等离子体。本研究的目的是阐明等离子体CVM的去除特性,例如去除率和表面粗糙度。抛光的熔融石英板在各种条件下通过等离子CVM,抛光和精密研磨进行加工。等离子体CVM的去除率比抛光快约4到1100倍,最大去除率几乎等于精密研磨的去除率。所得表面的粗糙度与抛光表面的粗糙度几乎相同。

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