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Removal Characteristics of Plasma Chemical Vaporization Machining with a Pipe Electrode

机译:用管电极去除等离子体化学汽化加工的去除特性

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Plasma chemical vaporization machining (CVM) is a high-precision chemical shaping method using rf plasma generated in the proximity of an electrode in an atmospheric environment. The purpose of the present study is to clarify the removal characteristics of plasma CVM, such as the removal rate and the surface roughness. Polished fused silica plates were processed by plasma CVM, polishing and precision grinding under various conditions. The removal rate of the plasma CVM was about 4 times to 1100 times faster than that of polishing, and the maximum removal rate was almost equal to that of precision grinding. The roughnesses of the resultant surfaces were almost the same as that of the polished surface.
机译:等离子体化学蒸发加工(CVM)是一种高精度化学成型方法,使用射频等离子体在大气环境中邻近电极的附近产生。本研究的目的是阐明等离子体CVM的去除特性,例如去除率和表面粗糙度。通过血浆CVM,在各种条件下通过等离子体CVM,抛光和精密研磨来加工抛光熔融二氧化硅板。血浆CVM的去除率比抛光的速度快约为1100倍,最大去除率几乎等于精密研磨。所得表面的粗糙度与抛光表面的粗糙度几乎相同。

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