PLASMA PROCESSING APPARATUS CAPABLE OF MAINTAINING THE PRESSURE WITHIN A SUPPLY PIPE HIGHER THAN THE VAPORIZATION PRESSURE OF THE COMPOUND OF A MATERIAL, COMPRISING THE PROCESSING GAS AND THE INNER WALL OF THE SUPPLY PIPE, AND A PLASMA PROCESSING METHOD THEREOF

摘要

PURPOSE: A plasma processing apparatus and a plasma processing method are provided to reduce the pollution of wafer, thereby improving the process yield rate.;CONSTITUTION: A plasma processing apparatus (100) comprises a process chamber (106), a specimen stand (113), a shower plate (104), a supply path of inert gas (119), and the adjustors (101-1b-101-16b). The process chamber forms the plasma by being arranged in a vacuum container and by supplying the processing gas to the inner side. The specimen stand is arranged in the downward of the process chamber and extracts the specimen in which a film layer of a processing object is arranged in the upper side. The shower plate arranges a penetration hole, in which the processing gas is flowed in, in the space within the process chamber of the upward of the specimen stand. The supply path of inert gas is connected to the supply path supplying the processing gas. The adjustors are arranged on the supply path of inert gas. The adjustors adjust a valve opening and closing the supply path or the flow rate of the inert gas.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Inert gas; (BB) Gas 1; (CC) Gas 16; (DD) Exhaust