Defect Localization Using Time-Resolved Photon Emission on SOI Devices that Fail Scan Tests

摘要

from the optical waveform evidence was that an open must exist between "A" and the NAND gate. As shown in Figure 14, an open metal line was discovered in the SEM. Further investigation revealed that incorrect bum-in code allowed several select lines on the mux to be simultaneously activated. This condition created high currents at the NAND gate output, which caused electromigration.