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Mask write time reduction: deployment of advanced approaches and their impact on established work models

机译:减少掩​​模写时间:部署高级方法及其对既定工作模型的影响

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摘要

The extension of 193nm exposure wavelength to smaller nodes continues the trend of increased data complexity andsubsequently longer mask writing times. In particular inverse lithography methods create complex mask shapes. Weintroduce a variety of techniqu
机译:将193nm曝光波长扩展到较小的节点继续了增加数据复杂性并因此延长掩膜写入时间的趋势。特别地,反光刻方法产生复杂的掩模形状。引入多种技术

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