首页> 外文会议>26th International Symposium for Testing and Failure Analysis, Nov 12-16, 2000, Bellevue, Washington >Wafer Conserving Full Range Construction Analysis for IC Fabrication and Process Development Based on FIB /Dual Beam Inline Application
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Wafer Conserving Full Range Construction Analysis for IC Fabrication and Process Development Based on FIB /Dual Beam Inline Application

机译:基于FIB /双光束在线应用的IC制造和工艺开发晶圆保护全过程构造分析

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摘要

The step into the production line environment is a quantum leap for physical failure analysis (PFA) and will change its work in the near future. Wafer sacrifice for analysis becomes obsolete. The main benefits are: 1. reduction of wafer costs, 2. more splits per development lot, 3. reduced cycle time of analysis and technology development. Machines needed for that purpose are dual beam SEM/FIB tools. In the following we present solutions how PFA in a broad range can be carried out inside of a production line. The analyzed wafers can be fed back into the production flow which results in lower overall costs and the feedback loop to production engineers is dramatically shortened leading to reduced down times of production tools etc. The highest risk that has kept the majority of semiconductor manufacturers from proceeding into this direction is the contamination of the productive wafer with Ga, the FIB beam particle, that may diffuse into productive parts of the wafer during heat cycles after the analysis step. We show that the risk of contamination by Ga and other materials can be controlled.
机译:进入生产线环境是物理故障分析(PFA)的一次巨大飞跃,并将在不久的将来改变其工作。用于分析的晶圆牺牲性已经过时。主要优点是:1.降低晶圆成本; 2.每个开发批次进行更多的拆分; 3.缩短分析和技术开发的周期时间。为此所需的机器是双光束SEM / FIB工具。在下文中,我们提出了解决方案,如何在生产线内部进行广泛的PFA。被分析的晶圆可以反馈到生产流程中,从而降低了总体成本,并且大大缩短了向生产工程师的反馈回路,从而缩短了生产工具等的停机时间。最大的风险使大多数半导体制造商无法进行朝着这个方向的是生产晶片受到FIB束状粒子Ga的污染,在分析步骤之后的热循环过程中,该杂质可能扩散到晶片的生产部分中。我们表明,可以控制Ga和其他材料污染的风险。

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