Cryogenic MMIC Low Noise Amplifiers for W-Band and Beyond

摘要

We discuss results of low noise amplifier Monolithic Millimeter-wave Integrated Circuits (MMICs), which were designed for specific frequencies in the range of 70-200 GHz. We report on room temperature and cryogenic noise performance for a variety of circuits. The designs utilize Northrop Grumman Corporation's (NGC) 35 nm gate length InP HEMT technology. Some of the lowest reported noise figures to date have been observed with this process at cryogenic temperatures.