首页> 外文会议>The 22nd International photovoltaic science and engineering conference >Simulation study of n-layer electrical properties in the performance of amorphous silicon thin-film solar cells
【24h】

Simulation study of n-layer electrical properties in the performance of amorphous silicon thin-film solar cells

机译:n层电特性对非晶硅薄膜太阳能电池性能的仿真研究

获取原文
获取原文并翻译 | 示例

摘要

Most amorphous Si (a-Si) thin-film solar cell investigate has focused on the p-layer,i-layer,p/i and TCO/p interfaces.However,the n-layer has received relatively little attention.
机译:大多数非晶硅(a-Si)薄膜太阳能电池的研究都集中在p层,i层,p / i和TCO / p界面。然而,n层受到的关注相对较少。

著录项

  • 来源
  • 会议地点 Hangzhou(CN)
  • 作者单位

    Photovoltaic Technology Division, Green Energy Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan;

    Graduate Program of Optoelectronic Technology, Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan;

    Photovoltaic Technology Division, Green Energy Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan;

    Photovoltaic Technology Division, Green Energy Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan;

    Graduate Program of Optoelectronic Technology, Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 太阳能技术 ;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号