Deposited well-crystallized cubic boron nitride films by pulsed plasma enhanced chemical vapor deposition at room temperature

摘要

The crystallized cubic boron nitride (c-BN) films have been grown on silicon (100) wafer substrate successfully at room temperature by using a pulsed plasma enhanced chemical vapor deposition technique. Infrared absorption spectra and x-ray diffraction indicate that deposited boron nitride films mainly consist of c-BN phase. The scanning electron microscopy images exhibit regular grain shapes. The mean grain size is about 500 nm. The ratio of c-BN phase to h-BN phase in the deposited thin films mainly depends on the discharging voltages that producing the pulsed plasma.