Impact of Ferroelectric HfO2 and Non-Uniform Doping on Nanoscale Planar SOI Junctionless Transistor

摘要

The present analysis is focused on studying the effect of ferroelectric (FE) insulator layer and non-uniform doping on the performance of short channel planar SOI Junctionless transistor. The channel is considered to be non-uniformly doped in vertical direction and hafnium oxide based ferroelectric material is considered in the gate stack. The device behavior has been studied by obtaining various device characteristics and the effect of FE insulator layer thickness along with doping profile parameters such as straggle and projected range has been explored. It has been observed that incorporation of non-uniform doping and ferroelectric layer significantly improves the performance of planar SOI Junctionless transistor.