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Synthesis and Characterization of Ni-doped ZnO Thin Films for Diluted Magnetic Semiconductor by Spin Coating Technique

机译:旋涂技术用于稀磁半导体的Ni掺杂ZnO薄膜的合成与表征

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Ni-doped ZnO thin films were synthesized by spin coating method on glass substrate with Ni concentration 0 to 5%. Films were fabricated in two different ways to study the effect of electrical, optical and magnetic properties of Ni doped ZnO thin films. Those two solutions were prepared by dissolving zinc acetate dehydrate, nickel (II) nitrate, diethanolamine (DEA), NaOH, methanol and ethanol. Thin films were fabricated by post-heating and pre-heating at 300°C for 10 minutes and finally annealed at different temperature maximum up to 500°C for 1 h respectively. The influence of the electrical, optical and magnetic properties of Ni doped ZnO thin films were investigated using FTIR, thickness profilometer, UV-Vis spectrophotometer, four probe technique and vibrating sample magnetometer (VSM). The result of FTIR shows the stretching vibration of the ZnO bond and Ni doped ZnO nanoparticles. The conductivity of ZnO is increased and hence electrical properties are improved. The electrical conductivity was increased with the concentration of Ni then decreased. Optical analysis was done on all thin films and pre-heating process shows the maximum optical transmittance and minimum absorbance that indicates the significant change of optical band gap. The vibrating sample magnetometer measurement results show no magnetic hysteresis loop. Ni doped ZnO thin film was successfully synthesized by spin coating method, characterization result suggest that the samples are semiconductor but does not show ferromagnetic behavior.
机译:通过旋涂法在Ni浓度为0〜5%的玻璃基板上合成了Ni掺杂的ZnO薄膜。以两种不同的方式制造薄膜,以研究掺Ni的ZnO薄膜的电,光和磁性能的影响。通过溶解乙酸锌脱水物,硝酸镍(II),二乙醇胺(DEA),NaOH,甲醇和乙醇来制备这两种溶液。通过在300°C下预热和预热10分钟来制造薄膜,最后分别在最高500°C的不同温度下退火1小时。使用FTIR,厚度轮廓仪,UV-Vis分光光度计,四探针技术和振动样品磁强计(VSM),研究了Ni掺杂的ZnO薄膜的电,光和磁性能的影响。 FTIR的结果表明ZnO键和Ni掺杂的ZnO纳米粒子的拉伸振动。 ZnO的电导率增加,因此电性能提高。电导率随Ni的浓度增加而降低。对所有薄膜都进行了光学分析,预热过程显示出最大的光学透射率和最小的吸光度,表明光学带隙发生了显着变化。振动样品磁力计的测量结果显示没有磁滞回线。通过旋涂法成功合成了掺Ni的ZnO薄膜,表征结果表明样品为半导体,但未表现出铁磁行为。

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