Institute of Microelectronics, Chinese Academy of Sciences, Key Laboratory of Silicon Device Technology, Beijing, 100029, China;
Beijing Zhongke Newmicrot Technology Incorporated Company, Beijing, 100029, China;
Institute of Microelectronics, Chinese Academy of Sciences, Key Laboratory of Silicon Device Technology, Beijing, 100029, China;
Beijing Zhongke Newmicrot Technology Incorporated Company, Beijing, 100029, China;
Institute of Microelectronics, Chinese Academy of Sciences, Key Laboratory of Silicon Device Technology, Beijing, 100029, China;
Insulated gate bipolar transistors; Nonhomogeneous media; Current distribution; Junctions; Temperature measurement; Temperature distribution;
机译:IGBT电源模块的热特性:对于相同的电功率,低电流-高电压或高电流-低电压测试条件之间的最佳选择是什么?
机译:使用短路电流作为温度敏感电参数的IGBT结温测量,以评估转换器原型
机译:IGBT模块中用于高带宽电流测量的点场传感评估
机译:并联IGBT模块中非均匀电流分布的新型电气评价方法
机译:在活动区域中使用IGBT模块设计高电流有源滤波器
机译:使用磁半形变轨迹直接成像不均匀的电流分布
机译:Icepak-pspice协同仿真方法研究键合线疲劳对短路IGBT模块电流和温度分布的影响
机译:非均匀和任意各向异性层状地球中传导和位移电流分布的准静态时域电势计算