Temperature based performance analysis of doping-less tunnel field effect transistor

摘要

Recently, the doping-less Tunnel Field Effect Transistor (TFET) has emerged as a novel device for the replacement of conventional TFET due to its similar trend in current characteristics and reduced fabrication complexity with low cost. However, the impact of temperature on its performance is yet an undiscovered aspect. The semiconductor devices are known to have significant temperature dependence characteristics. Thus, it is very much of importance to analyse the behavior of the device at different temperature. In this concern, an extensive study has been performed for temperature sensitivity analysis of the behavior of the doping-less TFET. For this, transfer characteristics, energy band diagram and carrier concentration are considered as DC figure of merits, whereas Transconductance (gm), gate-to-drain capacitance (Cgd)), cut off frequency (fT) and gain bandwidth product (GBW) are used as RF performance parameters. Further, the effect of variation in temperature on the Off-state and its components such as Band to Band Tunneling (BTBT), Trap Assisted Tunneling (TAT) and Shockley-Read-Hall (SRH) is also analyzed with different drainchannel spacer widths for doping-less TFET. All the simulations have been performed on Silvaco ATLAS simulator.