A hybrid optical interconnection system in standard CMOS process

摘要

A hybrid optical interconnection system was designed and fabricated using standard 0.18-μm CMOS process without any modification. This interconnection system integrates poly-silicon light emitting diode (LED), waveguide consisting of silicon dioxide and metal and photodetector on a single silicon chip. The poly-silicon silicon LED can emit light at 0.98V voltage when it works at the positive Carrier injection mode. The dark current of the photodetector is just a few picoampere (pA) and a big photocurrent versus dark current ratio was got when the current of LED is 200 mA. The light emitted by LEDs transmits through the waveguide can be detected by the photodetector. Experimental results show that on-chip optical interconnects are achieved by standard CMOS technology successfully.