Study of logic gates at 16nm with graphene nanoribbon interconnects and FinFETs

摘要

This paper presents a study of different digital circuits using two new technologies called GrapheneNanoribbon interconnects (GNRs) and FinFETs at 16 nm scale. A comparative study of the rise time and fall time is obtained at the output of the digital circuits designed using simple interconnects, using graphenenanoribbon interconnects (GNRs), and using FinFETs and GNR interconnects.