Development of metal oxide thin films for self power generating integrated devices

摘要

Present work focuses on the development of thermoelectric aluminum-doped ZnO (Al:ZnO) and NiO thin films Pulsed Laser deposition technique. XRD and Hall studies were carried out to study the structural and electrical properties of the prepared thin films. The thermoelectric studies were carried out on these films using in-house developed thermoelectric measurement set-up. The Seebeck coefficient and the electrical conductivity of the Al:ZnO and NiO thin films are found to be 31 μV/K and 20 μV/K and 902.87 S/cm and 0.096 S/cm respectively. Al:ZnO thin films yielded the comparatively higher power factor of 8.67×10-5 W/mK2 as compared to NiO thin films with power factor of 38.4×10-10 W/mK2. Results indicate the possibility of realizing thin film based self-generating integrated devices.